TA-MRAM cell with seed layer having improved data retention, reduced writing and reading fields

摘要

The present disclosure concerns a MRAM cell (1) comprising a magnetic tunnel junction (2) comprising: a sense layer (21) having a sense magnetization (210) that is freely switchable; a storage layer (23) having a storage magnetization (230); a tunnel barrier layer (22) comprised between the sense and the storage layers (21, 23); and an antiferromagnetic layer (24) pinning the storage layer (23) at a low temperature threshold and freeing it at a high temperature threshold; wherein the tunnel magnetic junction (2) further includes a seed layer (25) comprising a NiFe -based alloy and being arranged such that the antiferromagnetic layer (24) is comprised between the seed layer (25) and the storage layer (23). The present disclosure further concerns a magnetic memory device comprising a plurality of the MRAM cell (1) and a method for writing and a self-referenced method for reading the MRAM cell (1).