METHOD OF FABRICATING ReRAM CAPABLE OF ADJUSTING CONDUCTIVE FILAMENTS AND ReRAM FABRICATED BY SAME

摘要

The present invention is to provide a method of fabricating a resistive random access memory (ReRAM), capable of controlling electrical characteristics by controlling the positions and the number of conductive filaments. The method includes the steps of: (a) preparing a substrate; (b) forming a lower electrode layer on the substrate; (c) forming a metallic oxide material representing resistive switching characteristics on the lower electrode layer; (d) forming a protective layer to protect the metallic oxide material and to form conductive filaments in required shape and required number on the metallic oxide material; (e) forming a protective layer having a pattern structure without a specific region of the protective layer by etching the protective layer up to the metallic oxide material through a photolithography process; (f) performing a metallic implantation process on an entire portion of the protective layer to locally form a region including a large quantity of metal in the metallic oxide material, corresponding to the patterned structure, thereby forming the conductive filaments; and (g) removing the protective layer having the patterned structure.;COPYRIGHT KIPO 2014