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ALN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING ALN SINGLE CRYSTAL BULK

机译:ALN BULK单晶,半导体器件以及AlN单晶大块的制造过程

摘要

An object of the present invention is less defective even when using a single crystal of the different materials as a crystal, to provide high-quality bulk single crystals of AlN and a method of manufacturing the same, and a semiconductor device. By a surface (1a) of the longitudinal hexagonal system single crystal substrate as a crystal (1) select 10~80 ° inclined surface on the C-plane (Fig. 1 (a)), the surface (1a) sublimation method on AlN It characterized in that for growing a single crystal 2 as a growth surface (2a) (FIG. 1 (b)). ;
机译:即使当使用不同材料的单晶作为晶体时,本发明的目的也是较少的缺陷,以提供高质量的AlN块状单晶及其制造方法,以及半导体器件。通过纵向六方晶系单晶衬底的表面(1a)作为晶体(1)选择C面上10〜80°倾斜的表面(图1(a)),在AlN上对该表面(1a)进行升华方法其特征在于用于生长单晶2作为生长表面(2a)(图1(b))。 ;

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