首页> 外国专利> NANOPARTICLE-TYPE SUPERLATTICE THIN FILM GROWING METHOD OF THERMOELECTRIC MODULE BY SOLUTION PROCESS

NANOPARTICLE-TYPE SUPERLATTICE THIN FILM GROWING METHOD OF THERMOELECTRIC MODULE BY SOLUTION PROCESS

机译:溶液的纳米颗粒型超晶格薄膜生长方法

摘要

The present invention relates to a method for growing a nanoparticle superlattice thin film of a thermoelectric element by a solution process. The present invention comprises a S1 step of repeating a solution process of dropping metal source containing solution on a substrate while rotating the substrate to form a plurality of thin films and forming a metal oxide buffer layer having preferred directivity; a S2 step of thermal annealing the buffer layer to be crystalized; a S3 step of forming a metal oxide thin film layer by a solution process of dropping metal source containing solution on the buffer layer of the rotated substrate while rotating the substrate passing through the S2 step; and a S4 of thermal annealing the buffer layer formed in the S2 step and the thin film layer formed in the S3 step to be crystalized. [Reference numerals] (S1) Form a ZnO buffer layer on a substrate through spin coating; (S2) Crystalize a buffer layer; (S3) Form a thin film layer on the buffer layer through spin coating; (S4) Crystalize the buffer layer and the thin film layer
机译:本发明涉及一种通过溶液法生长热电元件的纳米粒子超晶格薄膜的方法。本发明包括一个S1步骤,即重复该溶液工艺,即在旋转基板以形成多个薄膜并形成具有优选方向性的金属氧化物缓冲层的同时,将含有金属源的溶液滴加到基板上。步骤S2,对待结晶的缓冲层进行热退火;步骤S3,在使通过步骤S2的基板旋转的同时,通过将含有金属源的溶液滴加到旋转后的基板的缓冲层上的固溶处理来形成金属氧化物薄膜层。在步骤S4中,对在步骤S2中形成的缓冲层和在步骤S3中形成的薄膜层进行热退火以使其结晶化。 [S1]通过旋涂法在基板上形成ZnO缓冲层。 (S2)结晶缓冲层; (S3)通过旋涂在缓冲层上形成薄膜层; (S4)使缓冲层和薄膜层结晶

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号