Manufacturing Method of High Quality Semiconductor Device on BSFs(basal plane stacking faults)-free Nitride Semiconductor

摘要

nitride semiconductor layer in the present invention is caused to face the stacking fault (BSFs) in order to prevent the semi-polar nitride but forms a semi-polar nitride semiconductor crystal semiconductor layer grown on the sapphire crystal face as possible , the oxide film , and a nitride film such as an insulating film mask over a certain thickness of the stacking fault is formed by an insulating film mask by growing a nitride semiconductor crystal through the window between the (BSFs) by blocking the growth of the side , and such that the insulating film is made of a mask pattern over the nitride semiconductor layer having a low defect density , the present invention relates to a method for producing a high quality semiconductor device having improved internal quantum efficiency and light extraction efficiency thereon . ;