Fabricating method of a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated by the same

摘要

This reliability is provided a method of manufacturing the improved semiconductor integrated circuit device . A method of manufacturing a semiconductor integrated circuit device is provided , but the first region and the second region is defined, the substrate , the distance gate pattern formed on the first region is small and provide the substrate than the interval of the gate pattern formed on the second region , forming a source / drain trench in the substrate exposed to both sides of the gate pattern, the 1 SiGe epitaxial that using a first source gas containing a silicon source gas fills the first portion of the source / drain trench forming the layer , and using a second source gas comprises a silicon source gas and a first silicon source gas different from the first source / drain forming a first epitaxial layer on a 2 SiGe claim 1 SiGe epitaxial layer in the trench quotation includes .