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PROCESS FOR PRODUCING EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE AND EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE OBTAINED BY THE PROCESS
PROCESS FOR PRODUCING EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE AND EPITAXIAL SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE OBTAINED BY THE PROCESS
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机译:制备表观单晶碳化硅基质和该方法获得的表观单晶碳化硅基质的方法
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摘要
Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T 0 ) and a set growth temperature (T 2 ) which are respectively lower and higher than a growth temperature (T 1 ) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.
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