CELL magnetic random access memory (MRAM), a method of recording and reading MRAM CELL WITH OPERATIONS SAMOOTNOSITELNOGO READING

摘要

1. A cell of the magnetic random access memory (MRAM), comprising the magnetic tunnel junction, comprising: a synthetic storage layer formed of a first ferromagnetic layer having a first magnetization of the storage, a second ferromagnetic layer having a second magnetization of the storage, and the separation layer between the first and second layers storage, wherein the separating layer is magnetically connects the first and second ferromagnetic layers, so that the first storage magnetization oriented substantially antiparallel by relative to the second magnetization; acquisition layer having magnetization perception, which is reversible; itunnelny barrier layer between the acquisition layer and storage layer, wherein the first storage magnetization induces a first local magnetic stray field, and the second storage magnetization induces a second local magnetic stray field, and the difference between the first and second local magnetic stray fields corresponding to the resulting local magnetic field scattering binding receiving layer, wherein the thickness of the first ferromagnetic layer and the thickness of the second ferromagnetic layer are chosen so that D ultiruyuschee local magnetic stray field relating receptive layer is less than about 50 E.2. MRAM cell according to Claim. 1 in kotoroytolschina first ferromagnetic layer and the thickness of the second ferromagnetic layer are chosen so that the resulting local magnetic stray field relating receptive layer is substantially nulevym.3. MRAM cell according to Claim. 1 in kotoroytolschina first ferromagnetic layer and the thickness