METHOD lapping ORIENTATION substrates for epitaxy DIAMOND

摘要

Method finishing orientation substrates for epitaxy of diamond, comprising the steps of a method for finishing of orientation plates semiconductor and optical materials, comprising fixing the single crystal substrate in the mandrel rotator configured to smooth rotation about the axis in two mutually perpendicular directions with fixing and controlled rotation angle , characterized in that on the original surface of the substrate is polished edge correction platform at a predetermined angle of misorientation from the selected face Measured pad topography with an optical profilometer with a vertical resolution of better than 1 nm, compared predetermined and actual angles, and in case of discrepancies produce substrate twist on the corrected angle at which the polished whole growth surface, wherein the area of ​​the correction site is located within 1-5% of the total area to be finishing the edge, which allows fine-tuning of the orientation of the single-crystal substrate without re-installation and perepolirovok with accuracy rates of division vernier protractor.