METHOD FOR FORMING A multilevel copper interconnect of integrated circuit with a tungsten hard mask

摘要

1. A method for forming multilevel interconnections of copper on VLSI process double Damascena through rigid bilayer mask comprising applying an insulating dielectric layer on a plate, in the body which will form the conductors of the integrated circuit, application of the insulating dielectric over the lower two-layer hard mask layer of silicon dioxide and a top layer two-layer rigid mask on the top layer forming the hard mask bilayer topological mask of resist, etching the upper layer of the two-layer rigid wt ki and the lower layer two-layer hard mask silicon dioxide through the resist layer, removing the residual resist from the surface of the formed two-layer hard mask, etching grooves and transition of the contact holes in a layer of insulating dielectric, filling the formed grooves and transition contact windows layer of metallization and removing excess volume of the supported metal with surface plates, characterized in that as a material of the upper layer using the hard mask layer volframa.2. The method of claim. 1, characterized in that the thickness of the upper layer tungsten hard mask bilayer is from 25 nm to 100 nm.