A method for demonstration of crystal-related defective

摘要

This invention generally relates to a method for detecting of grown-in defects in a semiconductor silicon substrate. The method comprises contacting a surface of the semiconductor silicon substrate with a gaseous acid in a reducing atmosphere at a temperature and duration, which are sufficient grown-in defects which are embedded in the semiconductor silicon substrate, to be allowed to grow to a size, which makes it possible with an optical detection device to be detected.