A method for producing a fet with the pretensioned channel with the source / drain-buffer and fet

摘要

A method of forming a field effect transistor (fet) with the pretensioned channel with the source / drain-buffer, wherein said method comprising:Etching cavities in a substrate on both sides of a gate stack, of the present on the substrate;Separation of the source / drain buffering material in the cavities;Etching of the source / drain buffering materials for vertical source / drain-buffer in addition to a channel region of the fet; andSeparation of the source / drain - stre sorting material in the cavities in addition to and over the vertical source / drain-buffer.