A tensile-strained semiconductor device and method of manufacturing a packaged semiconductor device with a tensile stress

摘要

A composite semiconductor device (100, 150) and a method of manufacturing a compound semiconductor device (100, 150) are disclosed. In one embodiment, the composite device (100, 150) includes a substrate (130) having a first thickness, a bonding layer (120) disposed on the substrate (130), and a chip (110) formed on the bonding layer (130). 120), the chip (110) having a second thickness, the second thickness being greater than the first thickness.