JUNCTION STRUCTURE OF INSULATION SUBSTRATE AND COOLER, MANUFACTURING METHOD THEREOF, POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a junction structure of an insulation substrate and a cooler, the junction structure having a high resistance with respect to a hot-cold cycle stress in which temperature difference is large, a manufacturing method of the junction structure, a power semiconductor module, and a manufacturing method of the power semiconductor module.;SOLUTION: A junction structure includes an insulation substrate 200 consisting of: a ceramic substrate 11; an upper circuit metal plate 13 bonded to an upper surface of the ceramic substrate 11; and a lower circuit metal plate 12 bonded to a lower surface of the ceramic substrate 11. Further, the junction structure has: a metal cooler 100; and an ultrahigh temperature bonding layer 10 which bonds the lower circuit metal plate 12 and the cooler 100 between the insulation substrate 200 and the cooler 100 and has an area smaller than that of the lower circuit metal plate 12 in a planar view. A notch 31 is formed on a surface of the lower circuit metal plate 12 in contact with a side of the cooler 100 along a periphery of the ultrahigh temperature bonding surface 10. The notch 31 has a shape which suppresses wet-spreading generated during formation of the ultrahigh temperature bonding surface 10 so that the ultrahigh temperature bonding surface 10 is formed in the reduced similar shape with respect to the lower circuit metal plate 12 in a planar view.;COPYRIGHT: (C)2015,JPO&INPIT