ANTI-FUSE OTP MEMORY CELL HAVING PERFORMANCE IMPROVEMENT, AND MANUFACTURING METHOD AND OPERATION METHOD OF MEMORY

摘要

PROBLEM TO BE SOLVED: To provide an anti-fuse OTP memory cell having performance improvement, and a manufacturing method and operation method of a memory.SOLUTION: An anti-fuse memory cell 200 includes an anti-fuse unit 206, and a selection transistor 208. The anti-fuse unit 206 includes an anti-fuse layer 210 and an anti-fuse gate 212 on a substrate 202, a corrected extension doping region 214 arranged in a substrate below the anti-fuse layer, and doping regions 216, 218 arranged in a substrate on the two facing sides of the anti-fuse gate. The selection transistor 208 includes a selection gate 220, a gate dielectric layer 222, and doping regions 218, 224. The doping regions 218, 224 are arranged, respectively, on the two facing sides of the selection gate in the substrate. The doping region, anti-fuse layer and anti-fuse gate form a varactor.