silicon carbide semiconductor device, manufacturing method and design method of the silicon carbide semiconductor device of silicon carbide semiconductor device

摘要

The silicon carbide semiconductor device, the first conductivity type silicon carbide layer 32, a second conductivity type silicon carbide layer 36, a gate trench 20, a gate electrode 79 provided on the gate trench 20 deeper than the gate trenches 20 It includes a protection trench 10 that is formed to a depth, a. In the horizontal direction, wherein the gate trench 20, the region that includes both protection trench 10 surrounding in a horizontal direction in a state in which an opening of at least a portion of the gate trench 20 becomes a cell area in the horizontal direction, the protection trench 10, a gate pad 89 or region arranged routing electrode connected to the gate pad 89 is the gate region. Protection trench 10 in the cell region includes a plurality of cell regions straight trench 11 extending in a straight line in the horizontal direction. The horizontal distance D _{1 between the cell area straight trench 11} is, horizontal distance D _{3 of the largest between the protection trench 10 that is included in the gate area} longer than ringing are.