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Method for fracturing or mask data creation or proximity effect correction, pattern set forming method, semiconductor element manufacturing method, and apparatus for fracturing or mask data creation or proximity effect correction
Method for fracturing or mask data creation or proximity effect correction, pattern set forming method, semiconductor element manufacturing method, and apparatus for fracturing or mask data creation or proximity effect correction
In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
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