首页> 外国专利> Method for fracturing or mask data creation or proximity effect correction, pattern set forming method, semiconductor element manufacturing method, and apparatus for fracturing or mask data creation or proximity effect correction

Method for fracturing or mask data creation or proximity effect correction, pattern set forming method, semiconductor element manufacturing method, and apparatus for fracturing or mask data creation or proximity effect correction

机译:用于断裂或掩模数据创建或邻近效果校正的方法,图案集形成方法,半导体元件制造方法以及用于断裂或掩模数据创建或邻近效果校正的设备

摘要

In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
机译:在使用成形带电粒子束光刻的半导体生产领域中,公开了一种用于压裂或掩膜数据准备或邻近效应校正的方法和系统,其中针对带电粒子束写入器系统确定一系列曲线字符投影镜头,从而一组镜头可以在表面上形成连续的轨道,可能宽度可变。还公开了一种使用一系列曲线字符投影镜头在表面上形成连续轨道的方法。还公开了通过使用一系列曲线字符投影镜头在表面上形成连续轨迹来制造掩模版和用于制造诸如硅晶片的衬底的方法。

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