首页> 外国专利> METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE ON SUBSTRATE, METHOD FOR FRACTURING OR MASK DATA PREPARATION FOR CHARGED PARTICLE BEAM LITHOGRAPHY, METHOD AND SYSTEM FOR FORMING A PLURALITY OF CIRCULAR PATTERNS ON SURFACE, AND SYSTEM FOR FRACTURING OR MASK DATA PREPARATION TO BE USED IN CHARGED PARTICLE BEAM LITHOGRAPHY

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE ON SUBSTRATE, METHOD FOR FRACTURING OR MASK DATA PREPARATION FOR CHARGED PARTICLE BEAM LITHOGRAPHY, METHOD AND SYSTEM FOR FORMING A PLURALITY OF CIRCULAR PATTERNS ON SURFACE, AND SYSTEM FOR FRACTURING OR MASK DATA PREPARATION TO BE USED IN CHARGED PARTICLE BEAM LITHOGRAPHY

机译:在基体上制造半导体器件的方法,带电粒子束光刻的压裂或屏蔽数据准备方法,在表面上形成多个圆形图案的方法和系统,以及要在其中使用的用于压碎或屏蔽数据准备的系统

摘要

PPROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device using a photomask and optical lithography. PSOLUTION: Circular patterns on a semiconductor wafer are formed by using circular patterns on the photomask manufactured using a charged particle beam writer. In one embodiment, circular patterns of various sizes are formed on the photomask using a single character projection (CP) character, by varying the charged particle beam dosage. The method for fracturing the circular patterns using circular CP characters by the various dosages or using VSB shots and the method for forming the circular patterns on a surface are disclosed as well, and the union of the plurality of VSB shots is different from a set of desired patterns. The method for preparing glyphs is disclosed as well, and dosage maps generated from one or more charged particle beam shots are pre-calculated. PCOPYRIGHT: (C)2010,JPO&INPIT
机译:

要解决的问题:提供一种使用光掩模和光学光刻制造半导体器件的方法。

解决方案:通过在使用带电粒子束写入器制造的光掩模上使用圆形图案,可以在半导体晶片上形成圆形图案。在一个实施例中,通过改变带电粒子束剂量,使用单个字符投影(CP)字符在光掩模上形成各种尺寸的圆形图案。还公开了使用各种剂量的圆形CP字符或使用VSB压痕来破坏圆形图案的方法以及在表面上形成圆形图案的方法,并且多个VSB压痕的并集不同于一组所需的模式。还公开了用于制备字形的方法,并且预先计算了从一个或多个带电粒子束发射产生的剂量图。

版权:(C)2010,日本特许厅&INPIT

著录项

  • 公开/公告号JP2010062562A

    专利类型

  • 公开/公告日2010-03-18

    原文格式PDF

  • 申请/专利权人 D2S INC;

    申请/专利号JP20090200191

  • 发明设计人 FUJIMURA AKI;TUCKER MICHAEL;

    申请日2009-08-31

  • 分类号H01L21/027;G03F1/08;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-21 19:04:30

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