Production method of preparation and ZnO-based semiconductor light-emitting device of the ZnO-based semiconductor layer

摘要

PROBLEM TO BE SOLVED: To provide a new method for manufacturing a ZnO-based semiconductor layer having p-type conductivity.;SOLUTION: The method for manufacturing the ZnO-based semiconductor layer includes: (a) simultaneously supplying a Zn material and an O material, an Mg material, as needed, to the upper part of a base layer to form an Mg_yZn_1-yO(0≤y≤0.6) single crystal film; (b) simultaneously supplying at least one of the Zn material and the Mg material, and an N material on the Mg_yZn_1-yO(0≤y≤0.6) single crystal film in such a supply amount that a layer to be formed does not cover the whole surface of a substrate, to form an N-doped Mg_zZn_1-zO(0≤z≤0.6) single crystal film.;COPYRIGHT: (C)2012,JPO&INPIT