The high voltage SCRMOS in BiCMOS process technology.

摘要

Drain structure of one and a (1010) Distributed SCR terminal (1008) and the drain diffusion region of central and placement (1006), SCR terminal (1016) distributed drain diffusion region integrated circuit (1000), is (1018) I have SCRMOS transistor including drain another structure and a (1012). (1022) is short-circuited to the source diffusion region MOS gate between the source and drain diffusion region diffusion region of central placement. Process for forming an integrated circuit having a transistor SCRMOS also disclosed.