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The voltage-gating process of the voltage-dependent anion channel is sensitive to ion flow.

机译:电压相关阴离子通道的电压门控过程对离子流敏感。

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摘要

The voltage-dependent anion channel (VDAC) is a voltage-gated channel from the mitochondrial outer membrane. It has two gating processes: one at positive potentials and the other at negative potentials. The energetics of VDAC gating are quite different when measured in the presence or absence of an ion gradient. A positive potential on the high-salt side results in channel closure at lower transmembrane potentials. The midpoint potential (V0) shifted from 25 to 5.7 mV, with an activity gradient for KCl of 0.6 versus 0.06. The opposite occurred for negative potentials on the high-salt side (V0 shifted from -25 to -29 mV). Thus the salt gradient favored closure for one gating process and opening for the other. These results could be explained if part of the electrochemical potential of the gradients present were transferred to the gating mechanism. If the kinetic energy of the ion flow were coupled to the gating process, the effects of the gradient would depend on the mass and velocities of these ions. This was tested by using a series of different salts (KCl, NaCl, LiCl, KBr, K acetate, Na butyrate, and RbBr) under an identical activity gradient. The kinetic energy correlated very well with the measured shifts in free energy of the channel gating. This was true for both polarities. Thus the gating of VDAC is influenced by ion flow. These results are consistent in sign and direction with the voltage gating process in VDAC, which is believed to involve the movement of a positively charged portion of the wall of the channel out of the membrane.
机译:电压依赖性阴离子通道(VDAC)是来自线粒体外膜的电压门控通道。它有两个门控过程:一个处于正电位,另一个处于负电位。在存在或不存在离子梯度的情况下进行测量时,VDAC门控的能量学差异很大。高盐侧的正电位会导致较低的跨膜电位下的通道关闭。中点电位(V0)从25变至5.7 mV,KCl的活性梯度为0.6对0.06。高盐侧的负电位则相反(V0从-25变为-29 mV)。因此,盐梯度有利于一种浇口过程的封闭和另一种浇口过程的开放。如果将存在的梯度的部分电化学势转移到门控机制,则可以解释这些结果。如果离子流的动能与选通过程耦合,则梯度的影响将取决于这些离子的质量和速度。通过在相同的活性梯度下使用一系列不同的盐(KCl,NaCl,LiCl,KBr,乙酸钾,丁酸钠和RbBr)进行测试。动能与通道门控自由能的测量位移非常相关。两种极性都是如此。因此,VDAC的门控受到离子流的影响。这些结果在符号和方向上与VDAC中的电压门控过程一致,据信这涉及通道壁带正电的部分从膜中移出。

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