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High voltage SCRMOS in BiCMOS process technology
High voltage SCRMOS in BiCMOS process technology
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机译:BiCMOS工艺技术中的高压SCRMOS
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摘要
Around the terminal and SCR (1010) and the drain region (1012), integrated circuit, including SCRMOS transistor formed surface field is reduced (RESURF) region with (1024). Is the same conductivity type as that of the (1014) drift region, RESURF region is more heavily doped than the (1014) drift region.
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