Thin BOX metal back gate type ultra-thin SOI device

摘要

Topic It is short, the thin BOX metal back gate type where the channel effect is decreased, extremely the SOI device is offered thin.Solutions The pole thin the silicon on insulator (ETSOI) semiconductor device is formed making use of the silicon on insulator (SOI) structure which has the silicon layer which is thinner than 20nm. The ETSOI device in order to prevent metal oxidation, is produced by thin nitride layer 102 and 104 it was closed airtight making use of thin tungsten batsukugeto 103, tungsten batsukugeto 103 is characterized by the low electrical resistivity. High k metal gate 132 and you repeat the structure, on that and the gate stack furthermore you include one which possesses 131 which was formed depending upon with the tungsten territory 133 which it can be brought together, 132 and 133 FET at least, the footprint of gate stack utilizes thin SOI layer 100 as the channel. As for the SOI structure which was formed in this way, the thickness of thin SOI and the variation of Vt by the dopant among those are controlled. The ETSOI high k metal back gate complete empty type device which the thin BOX is jointly used brings it is superior channel control shortly, decreases drain being induced bias and sabusuretsushiyorudo swing substantially. This structure during heat treatment, is something which supports the evidence of stability of the wafer which possesses the tungsten membrane in interval especially STI and contact formation. Selective figure Figure 7