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Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

机译：具有金属栅极（TaSiN）栅极，高K（HfO / sub 2 /）电介质和升高的源极/漏极扩展的超薄体全耗尽SOI器件

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We report for the first time physical and electrical characterization of ultra-thin (>100-150A) Fully-Depleted Silicon-On-Insulator (SOI) n and pMOSFETs using TaSiN gate and HfO/sub 2/ dielectric with elevated Source/Drain extensions.

机译：我们首次报告了使用TaSiN栅极和HfO / sub 2 /电介质并具有提高的源极/漏极扩展能力的超薄（> 100-150A）全耗尽型绝缘体上硅（SOI）n和pMOSFET的物理和电气特性。

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《》|2002年|p.205-206|共2页
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Vandooren; A.; Egley; S.; Zavala; M.; Franke; A.; Barr; A.; White; T.; Samavedam; S.; Mathew; L.; Schaeffer; J.; Pham; D.; Conner; J.; Dakshina-Murthy; S.; Nguyen; B.-Y.; White; B.; Orlowski; M.; Mogab; J.;
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中图分类无线电电子学、电信技术;
关键词
tantalum compounds; silicon compounds; hafnium compounds; silicon-on-insulator; MOSFET; ultra-thin body fully-depleted SOI devices; metal gate; high K dielectric; elevated source/drain extensions; pMOSFET; 100 to 150 A; TaSiN-HfO/sub 2/;

机译：钽化合物;硅化合物; ha化合物;绝缘体上硅; MOSFET;超薄型全耗尽SOI器件;金属栅极;高K电介质;源极/漏极扩展; pMOSFET; 100至150A; TaSiN-HfO / sub 2 /;

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专利

1. Fully-depleted SOI devices with TaSiN gate, HfO/sub 2/ gate dielectric, and elevated source/drain extensions [J] . Vandooren A., Barr A., Mathew L., IEEE Electron Device Letters . 2003,第5期

机译：具有TaSiN栅极，HfO / sub 2 /栅极电介质和升高的源极/漏极扩展的全耗尽SOI器件
2. A Comparison Study of Symmetric Ultrathin-Body Double-Gate Devices With Metal Source/Drain and Doped Source/Drain [J] . Shiying Xiong, Tsu-Jae King, Jeffrey Bokor IEEE Transactions on Electron Devices . 2005,第8期

机译：具有金属源极/漏极和掺杂源极/漏极的对称超薄双栅极器件的比较研究
3. Computer Design of Source/Drain Extension Region Profile and Spacer Length in Tri-Gate Body-Tied Fin Field-Effect Transistors with High-k Gate Dielectrics [J] . Jae-Joon Song, Dae-hyun Moon, Ohyun Kim Applied physics express . 2010,第6issue2期

机译：具有高k栅极电介质的三栅极体绑鳍式场效应晶体管的源/漏扩展区轮廓和间隔物长度的计算机设计
4. Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K(HfO{sub}2) dielectric and elevated source/drain extensions [C] . A. Vandooren, S. Egley, M. Zavala, IEEE International Silicon on Insulator Conference . 2002

机译：超薄体全耗尽的SOI器件，具有金属栅极（Tasin）栅极，高k（HFO {Sub} 2）电介质和升高的源/漏极延伸
5. Photoemission spectroscopic studies of metal-gated MOS structures based on ultra-thin high-kappa dielectrics. [D] . Choung, Jiyoung. 2008

机译：基于超薄高κ电介质的金属门控MOS结构的光发射光谱研究。
6. Top-Gated Graphene Nanoribbon Transistors with Ultra-Thin High-k Dielectrics [O] . Lei Liao, Jingwei Bai, Rui Cheng, -1

机译：顶栅石墨烯纳米带晶体管具有超薄高k电介质
7. Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO(2) layer as gate dielectric [O] . Sun, Jie, Larsson, Marcus, Maximov, Ivan I., 2009

机译：通过并入HfO（2）层作为栅极电介质，在InGaAs / InP中实现的栅极定义量子点器件

Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

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