Method of manufacturing a semiconductor device comprising a semiconductor device and an ESD protection device comprising an ESD protection device.

摘要

PROBLEM TO BE SOLVED: To reduce an area required for an ESD protection element.;SOLUTION: A semiconductor device comprises: a P-type or an N-type substrate; a circuit arranged on the substrate; a first electrode pad and a second electrode pad for input or output of the circuit; an impurity diffusion region whose conductivity type is different from the type of the substrate; a first wiring that connects the first electrode pad to the impurity diffusion region; and a second wiring that connects the second electrode pad to an area of the substrate excluding the impurity diffusion region.;COPYRIGHT: (C)2012,JPO&INPIT