HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY AND METHOD OF PREPARING THE SAME

摘要

A high-efficiency heterojunction filed effect transistor in which a gate electrode area is formed to the direction of a drain electrode on nitride-based buffer layers with a low dislocation density to exhibit a high breakdown voltage, and its preparation method.;The heterojunction field effect transistor according to the present invention minimizes dislocations in a device and provides a high breakdown voltage by forming a gate electrode area to the direction of a drain electrode on the top of the wing area that is on the far side opposite to one that includes the coalescence boundary of the wing area with a lower dislocation density in the buffer layer.