NITRIDE-BASED HETEROSTRUCTURE FIELD EFFECT TRANSISTOR HAVING HIGH EFFICIENCY

摘要

A high efficiency heterostructure field effect transistor (HFET) capable of suppressing a leakage current and enhancing a current density by lowering a barrier between an electrode and a semiconductor layer is provided. The high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (Si_xC_1-x) functional layer formed on the AlGaN layer.