SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND METHODS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE INGOT

摘要

A silicon carbide substrate, a silicon carbide ingot, and methods for manufacturing the silicon carbide substrate and the silicon carbide ingot capable of improving a yield of a semiconductor device having silicon carbide as constituent material are provided. In the silicon carbide substrate, patterns formed by crossing straight lines extending along the 11-20 direction and being observable by means of an X-ray topography are present at a number density of less than or equal to 0.1 patterns/cm² on one main surface. As described above, in the silicon carbide substrate, the number density of the crossing patterns present on the main surface is reduced to less than or equal to 0.1 patterns/cm². Therefore, when the semiconductor device is manufactured with use of a silicon carbide substrate, a lowering of a yield caused by the crossing patterns can be suppressed.