首页> 外国专利> Surfaces with embedded sensing and actuation networks using complementary-metal-oxide-semiconductor (CMOS) sensing chips

Surfaces with embedded sensing and actuation networks using complementary-metal-oxide-semiconductor (CMOS) sensing chips

机译:使用互补金属氧化物半导体(CMOS)感应芯片的嵌入式感应和驱动网络表面

摘要

A device and method for area sensing and actuation comprises highly scalable sensing and actuation network that can control a high density of sensing and actuation elements over a physical area. The device comprises a matrix of CMOS sensing chips that each comprise a plurality of sensing electrodes arranged in a matrix of columns and rows along horizontal wires and vertical wires. The vertical wires carry an activation signal to activate a column of sensing electrodes, and the vertical wires carry sensing and actuation signals between the column of sensing electrodes and a processing chip. The signals may be amplified by CMOS sensing chips between the source and destination of the signals. In this way, signals may be received from and sent to a dense matrix of sensing electrodes spanning a large geographic area with little or no degradation.
机译:用于区域感测和致动的设备和方法包括高度可扩展的感测和致动网络,其可以控制物理区域上的高密度的感测和致动元件。该装置包括CMOS感测芯片矩阵,每个CMOS感测芯片包括沿着水平线和垂直线以列和行的矩阵布置的多个感测电极。垂直线携带激活信号以激活一列感测电极,并且垂直线携带在感测电极列和处理芯片之间的感测和致动信号。信号可以通过CMOS传感芯片在信号的源和目标之间进行放大。以这种方式,可以从跨越很小的地理区域或几乎​​没有退化的大面积传感电极的密集矩阵接收信号并将其发送到该密集矩阵。

著录项

  • 公开/公告号US9158408B2

    专利类型

  • 公开/公告日2015-10-13

    原文格式PDF

  • 申请/专利权人 BHARADWAJ AMRUTUR;NAVAKANTA BHAT;

    申请/专利号US20100869020

  • 发明设计人 BHARADWAJ AMRUTUR;NAVAKANTA BHAT;

    申请日2010-08-26

  • 分类号G01R1;G01R29;G06F3/041;G06F3/01;

  • 国家 US

  • 入库时间 2022-08-21 15:23:42

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