首页> 外国专利> SURFACES WITH EMBEDDED SENSING AND ACTUATION NETWORKS USING COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR (CMOS) SENSING CHIPS

SURFACES WITH EMBEDDED SENSING AND ACTUATION NETWORKS USING COMPLEMENTARY-METAL-OXIDE-SEMICONDUCTOR (CMOS) SENSING CHIPS

机译:使用互补金属氧化物半导体离子(CMOS)芯片的具有嵌入式传感和激励网络的表面

摘要

A device and method for area sensing and actuation comprises highly scalable sensing and actuation network that can control a high density of sensing and actuation elements over a physical area. The device comprises a matrix of CMOS sensing chips that each comprise a plurality of sensing electrodes arranged in a matrix of columns and rows along horizontal wires and vertical wires. The vertical wires carry an activation signal to activate a column of sensing electrodes, and the vertical wires carry sensing and actuation signals between the column of sensing electrodes and a processing chip. The signals may be amplified by CMOS sensing chips between the source and destination of the signals. In this way, signals may be received from and sent to a dense matrix of sensing electrodes spanning a large geographic area with little or no degradation.
机译:用于区域感测和致动的设备和方法包括高度可扩展的感测和致动网络,其可以控制物理区域上的高密度的感测和致动元件。该装置包括CMOS感测芯片矩阵,每个CMOS感测芯片均包括多个感测电极,沿着水平线和垂直线以列和行的矩阵布置。垂直线携带激活信号以激活一列感测电极,并且垂直线携带在感测电极列和处理芯片之间的感测和致动信号。信号可以通过CMOS传感芯片在信号的源和目标之间进行放大。以这种方式,可以从跨越很小的地理区域或几乎​​没有退化的大面积传感电极的密集矩阵接收信号并将其发送到该密集矩阵。

著录项

  • 公开/公告号IN2010CH01948A

    专利类型

  • 公开/公告日2012-05-18

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN1948/CHE/2010

  • 发明设计人 BHARADWAJ AMRUTUR;NAVAKANT BHAT;

    申请日2010-07-08

  • 分类号

  • 国家 IN

  • 入库时间 2022-08-21 17:24:29

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