首页> 外文会议>Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International >On-chip sensing and actuation methods for integrated self-healing mm-wave CMOS power amplifier
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On-chip sensing and actuation methods for integrated self-healing mm-wave CMOS power amplifier

机译:集成式自修复毫米波CMOS功率放大器的片上感测和驱动方法

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This paper presents various low power, compact, low insertion-loss sensors with digitized ADC output and digitally controlled actuation methods for on-chip characterization and healing of a mm-Wave power amplifier. We demonstrate low insertion loss (0.4dB) RF sensors which measure true input and output power in presence of load variations and very low-headroom (10–30mV) DC sensors with built-in regulators and thermal sensors as methods for measuring PA efficiency. All sensor outputs are digitized by a SAR-based ADC for communication with a central digital core. The paper also presents digitally controlled combiner tuning and PA bias actuation. The circuits are implemented in 45 nm SOI CMOS and enable full on-chip digitally controlled characterization and actuation of the PA with a power overhead of less than 6%.
机译:本文介绍了各种低功耗,紧凑型,低插入损耗传感器,这些传感器具有数字化ADC输出以及数控控制的驱动方法,可用于毫米波功率放大器的片上表征和修复。我们展示了低插入损耗(0.4dB)的RF传感器,该传感器可在负载变化的情况下测量真正的输入和输出功率,以及具有内置稳压器和热传感器的超低净空(10-30mV)直流传感器,作为测量PA效率的方法。所有传感器输出均通过基于SAR的ADC进行数字化处理,以便与中央数字核通信。本文还介绍了数字控制的合成器调谐和PA偏置驱动。这些电路在45 nm SOI CMOS中实现,并能够以小于6%的功率开销实现PA的完整片上数字控制特性和驱动。

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