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Semiconductor device with integrated magnetic element provided with a barrier structure against metal contamination, and manufacturing
Semiconductor device with integrated magnetic element provided with a barrier structure against metal contamination, and manufacturing
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机译:具有集成的磁性元件的半导体器件及其制造方法,该集成的磁性元件具有防止金属污染的阻挡结构
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摘要
A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element.
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