Amorphous Silicon Thin-Film Transistors with Reduced Electrode Contact Resistivity and Methods for Forming the Same

摘要

Embodiments described herein provide amorphous silicon thin-film transistors (a-Si TFTs) and methods for forming a-Si TFTs. A substrate is provided. A gate electrode is formed above the substrate. An a-Si channel layer is formed above the gate electrode. A contact layer is formed above the a-Si channel layer. The contact layer includes titanium, zinc, arsenic, or a combination thereof. A source electrode and a drain electrode are formed above the contact layer.