METHODS FOR FABRICATING INTEGRATED CIRCUITS INCLUDING TOPOGRAPHICAL FEATURES FOR DIRECTED SELF-ASSEMBLY

摘要

Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming etch resistant fill control topographical features that overlie a semiconductor substrate. The etch resistant fill control topographical features define an etch resistant fill control confinement well. A block copolymer is deposited into the etch resistant fill control confinement well. The block copolymer is phase separated into an etchable phase and an etch resistant phase. The etch resistant fill control topographical features direct the etch resistant phase to form an etch resistant plug in the etch resistant fill control confinement well.