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SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES FOR LOGIC AND MULTILEVEL MEMORY APPLICATIONS
SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES FOR LOGIC AND MULTILEVEL MEMORY APPLICATIONS
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机译:硅锗和多锗锗以及纳米结构在逻辑和多级存储器中的应用
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摘要
A method to provide a transistor or memory cell structure. The method comprises: providing a substrate including a lower Si substrate and an insulating layer on the substrate; providing a first projection extending above the insulating layer, the first projection including an Si material and a Si1−xGex material; and exposing the first projection to preferential oxidation to yield a second projection including a center region comprising Ge/Si1−yGey and a covering region comprising SiO2 and enclosing the center region.
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