CRYSTALLIZATION OF AMORPHOUS FILMS AND GRAIN GROWTH USING COMBINATION OF LASER AND RAPID THERMAL ANNEALING

摘要

A method is disclosed for crystallizing semiconductor material so that it has large grains of uniform size comprising delivering a first energy exposure of high intensity and short duration, and then delivering at least one second energy exposures of low intensity and long duration. The first energy exposure heats the substrate to a high temperature for a duration less than about 0.1 sec. The second energy exposure heats the substrate to a lower temperature for a duration greater than about 0.1 sec.