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Method of manufacturing a semiconductor device having a laminated structure comprising a boron-doped silicon germanium film and a metal film
Method of manufacturing a semiconductor device having a laminated structure comprising a boron-doped silicon germanium film and a metal film
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机译:具有层叠结构的半导体器件的制造方法,该层叠结构包括硼掺杂的硅锗膜和金属膜
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摘要
A semiconductor device has memory cell portions and compensation capacitance portions on a single substrate. The memory cell portion and the compensation capacitance portion have mutually different planar surface areas. The memory cell portion and the compensation capacitance portion include capacitance plate electrodes of the same structure. The capacitance plate electrode has a laminated structure including a boron-doped silicon germanium film and a metal film.
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