Boron-Doped Diamond Films Deposited on Silicon Substrates by MPCVD

摘要

High quality, good adhesion and p-type diamond films are obtained by microwave plasma chelincal vapordeposition. The area of the films is 20 x 20 nun. The structural morphologies, bonding mechanism and surfacemol’Phology are characterized by X-ray diffraction (XRD), Raman scattering and scanning Electron microscopy(SEM) respectively. The resistance, Hall coefficient, mobility, etc. are also measured. Tile factors related tonucleation and other properties of diamond films are discussed.