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Gringo heterojunction bipolar transistor with a metal extrinsic base region

机译：具有金属非本征基极区的Gringo异质结双极晶体管

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摘要

The invention relates to a semiconductor device (30) comprising a substrate (1), a semiconductor body (25) comprising a bipolar transistor that comprises a collector region (3), a base region (4), and an emitter region (15), wherein at least a portion of the collector region (3) is surrounded by a first isolation region (2, 8), the semiconductor body (25) further comprises an extrinsic base region (35) arranged in contacting manner to the base region (4). In this way, a fast semiconductor device with reduced impact of parasitic components is obtained.

机译：本发明涉及包括衬底（ 1 ）的半导体器件（ 30 ），包括双极晶体管的半导体本体（ 25 ），该双极晶体管包括：集电极区（ 3 ），基极区（ 4 ）和发射极区（ 15 ），其中至少一部分集电极区（ 3 ）被第一隔离区（ 2，8 ）包围，半导体主体（ 25 ）还包括非本征基极区域（ 35 ）以与基础区域（ 4 ）接触的方式排列。以此方式，获得了具有减小的寄生部件的影响的快速半导体器件。 展开▼

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公开/公告号US9041149B2

专利类型

公开/公告日2015-05-26

原文格式PDF

申请/专利权人 GUILLAUME BOCCARDI;MARK C. J. C. M. KRAMER;JOHANNES J. T. M. DONKERS;LI JEN CHOI;STEFAAN DECOUTERE;ARTURO SIBAJA-HERNANDEZ;STEFAAN VAN HUYLENBROECK;RAFAEL VENEGAS;
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申请/专利号US200913059277

发明设计人 STEFAAN DECOUTERE;STEFAAN VAN HUYLENBROECK;ARTURO SIBAJA-HERNANDEZ;RAFAEL VENEGAS;MARK C. J. C. M. KRAMER;JOHANNES J. T. M. DONKERS;LI JEN CHOI;GUILLAUME BOCCARDI;
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申请日2009-08-05

分类号H01L21/70;H01L29/10;H01L21/8249;H01L27/06;H01L29/66;

国家 US

入库时间 2022-08-21 15:19:30

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1. Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition [J] . LIN Tao, CAI Dao-min, LI Xian-jie, 半导体光子学与技术（英文版） . 2007,第003期

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3. Neuro-Space Mapping for Modeling Heterojunction Bipolar Transistor [J] . Yan Shuxia, Cheng Qianfu, Wu Haifeng, 天津大学学报（英文版） . 2015,第001期

4. Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions [J] . Md Mazhar Ul Hoque, Zeynep Celik-Butler, Samuel Martin, Solid-State Electronics . 2006,第7a8期

5. Low-Capacitance Low-Voltage Transient Voltage Suppressor Using Diode-Activated SiGe Heterojunction Bipolar Transistor in SiGe Heterojunction Bipolar Transistor Bipolar Complementary Metal-Oxide-Semiconductor Process [J] . Sheng-Huei Dai, Jeng-Jie Peng, Chia-Cheng Chen, Japanese journal of applied physics . 2009,第4issue2期

6. Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors [J] . E Ramirez-Garcia, N Zerounian, F Aniel, Semiconductor science and technology . 2014,第9期

7. Oxide defined AlAsSb/InGaAs/InP heterojunction bipolar transistors with a buried metal extrinsic base [C] . Lear, K.L., Blum, . 1997

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