Method of manufacturing Si-based high-mobility group III-V/Ge channel CMOS

摘要

A method can include: growing a Ge layer on a Si substrate; growing a low-temperature nucleation GaAs layer, a high-temperature GaAs layer, a semi-insulating InGaP layer and a GaAs cap layer sequentially on the Ge layer after a first annealing, forming a sample; polishing the sample's GaAs cap layer, and growing an nMOSFET structure after a second annealing on the sample; performing selective ICP etching on a surface of the nMOSFET structure to form a groove, and growing a SiO₂ layer in the groove and the surface of the nMOSFET structure using PECVD; performing the ICP etching again to etch the SiO₂ layer till the Ge layer, forming a trench; cleaning the sample and growing a Ge nucleation layer and a Ge top layer in the trench by UHVCVD; polishing the Ge top layer and removing a part of the SiO₂ layer on the nMOSFET structure; performing a CMOS process.