Lattice matched crystalline substrates for cubic nitride semiconductor growth
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机译:用于晶格氮化物半导体生长的晶格匹配晶体衬底
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摘要
Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a′) that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline InxGayAl1-x-yN alloy. The lattice parameter of the InxGayAl1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a′)=√2(a) or (a′)=(a)/√2. The semiconductor alloy may be prepared to have a selected band gap.
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机译:公开的实施例包括制造半导体层或器件的方法以及由其制造的器件。所述方法包括但不限于提供具有已知晶格参数的立方晶体表面的基板,并通过重合位点晶格匹配外延在立方晶体基板上生长立方晶体III族氮化物合金层。可以制备立方晶III族氮化物合金以具有与衬底(a)的晶格参数有关的晶格参数(a')。 III族氮化物合金可以是立方晶体In x Sub> Ga y Sub> Al 1-x-y Sub> N合金。 In x Sub> Ga y Sub> Al 1-xy Sub> N或其他III族氮化物合金的晶格参数可能与衬底晶格参数有关由(a')=√2(a)或(a')=(a)/√2。可以将半导体合金制备为具有选定的带隙。
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