Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

摘要

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. Therngrowth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including disloca-rntions, micro-twins, cracks, and delami-nations.