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Optoelectronic device with a wide bandgap and method of making same
Optoelectronic device with a wide bandgap and method of making same
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机译:具有宽禁带的光电子器件及其制造方法
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摘要
A light-emitting device epitaxially-grown on a GaAs substrate which contains an active region composed of AlxGa1-xAs alloy or of related superlattices of this materials system is disclosed. This active region either includes tensile-strained GaP-rich insertions aimed to increase the forbidden gap of the active region targeting the bright red, orange, yellow, or green spectral ranges, or is confined by regions with GaP-rich insertions aimed to increase the barrier height for electrons in the conduction band preventing the leakage of the nonequilibrium carriers outside of the light-generation region.
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机译:外延生长在GaAs衬底上的发光器件是:由Al x Sub> Ga 1-x Sub> As合金或该材料体系的相关超晶格组成的有源区。披露。该活性区域或者包括拉伸应变的富含GaP的插入物,目的是增加针对亮红色,橙色,黄色或绿色光谱范围的活性区域的禁隙,或者受具有GaP丰富的插入物的区域限制,以增加光谱的明亮范围。导带中电子的势垒高度可防止非平衡载流子泄漏到光产生区域之外。
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