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Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

机译：新型P型宽带隙锰氧化物量子点在深紫色范围内进行光电器件

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Somak Mitra; Yusin Pak; Naresh Alaal; Mohamed N. Hedhili; Dhaifallah R. Almalawi; Norah Alwadai; Kalaivanan Loganathan; Yogeenath Kumarasan; Namsoo Lim; Gun Y. Jung; Iman S. Roqan;
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1. Novel P-Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices [J] . Mitra Somak, Pak Yusin, Alaal Naresh, Advanced Optical Materials . 2019,第21期

机译：在深紫外范围内为光电器件工作的新型P型宽带隙氧化锰量子点
2. Growth and properties of wide bandgap MgSe/Zn_xCd_(1_x)Se multiple quantum wells for intersubband devices operating at short wavelengths [J] . B.S. Li, A. Shen, W.O. Charles, Journal of Crystal Growth . 2009,第7期

机译：用于短波长子带间器件的宽带隙MgSe / Zn_xCd_（1_x）Se多量子阱的生长和特性
3. Green synthesis of graphene quantum dots and the dual application of graphene quantum dots-decorated flexible MSM p-type ZnO device as UV photodetector and piezotronic generator [J] . NAZIA FATHIMA, N PRADEEP, JYOTHI BALAKRISHNAN Bulletin of materials science . 2021,第a期

机译：石墨烯量子点的绿色合成及石墨烯量子点装饰柔性MSM P型ZnO装置的双重应用作为紫外线光电探测器和压电调谐器
4. Raman spectroscopy of self-assembled InAs quantum dots in wide-bandgap matrices of AlAs and aluminium oxide [C] . D.A.Tenue, A.G.Milekhin, A.K.Bakarov, Materials Research Society Symposium . 2003

机译：铝和氧化铝的宽带隙矩阵中自组装INAS量子点的拉曼光谱
5. Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges. [D] . Zhang, Wei. 2014

机译：在紫外和太赫兹光谱范围内工作的基于氮化铝镓的光电器件的开发。
6. Contact printing of colloidal nanocrystal thin films for hybrid organic/quantum dot optoelectronic devices [O] . Matthew J. Panzer, *, Katherine E. Aidala, 2012

机译：用于有机/量子点混合光电器件的胶体纳米晶体薄膜的接触印刷
7. Graphene Quantum Dots: Molecularly Designed, Nitrogen-Functionalized Graphene Quantum Dots for Optoelectronic Devices (Adv. Mater. 23/2016) [O] . Hiroyuki Tetsuka, Akihiro Nagoya, Takanori Fukusumi, 2016

机译：石墨烯量子点：用于光电器件的分子设计，氮官能化石墨烯量子点（ADV。Mater。23/2016）
8. III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (OnSilicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: Al-Based III-V Native Oxides [R] . Holonyak, N., Hsieh, K. C., Stillman, G. E. 1992

机译：III-V半导体量子阱激光器及相关光电器件（Onsilicon）。氧化物定义的半导体量子阱激光器和光电器件：al基III-V天然氧化物

Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

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