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Semiconductor memory device capable of setting an internal state of a NAND flash memory in response to a set feature command
Semiconductor memory device capable of setting an internal state of a NAND flash memory in response to a set feature command
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机译:能够响应于设置特征命令来设置NAND闪存的内部状态的半导体存储装置
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摘要
A semiconductor memory device according to an embodiment is provided with a plurality of first latch circuits that latch setting-data at different timings, a plurality of hold circuits provided corresponding to the respective plurality of first latch circuits, each holding data latched by the corresponding first latch circuit, and an address decoder that decodes an address that specifies a destination to hold data. Each of the plurality of hold circuits has one or more holding parts that hold data latched by the corresponding first latch circuit based on a decode signal decoded by the address decoder.
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