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Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials
Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materials
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机译:外延反应堆内部组件的几何形状,用于生长高质量的III族氮化物材料
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摘要
The geometry of transition from cylindrical to rectangular shape through the conical part in hydride vapor phase epitaxial (HVPE) systems for deposition of III-nitride films is disclosed. It is used to ensure the laminar gas flow inside the growth zone of the system. For the velocity of flow within the atmospheric pressure reactor to be sufficient, the precursors are injected through the narrow diameter tubing injectors. The quartz reactor geometry is introduced to control the transition from jet to laminar flow.
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