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Ohmic contact schemes for group III-V devices having a two-dimensional electron gas layer
Ohmic contact schemes for group III-V devices having a two-dimensional electron gas layer
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机译:具有二维电子气层的III-V组器件的欧姆接触方案
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摘要
A semiconductor device includes a first layer and a second layer over the first layer. The first and second layers are configured to form an electron gas layer at an interface of the first and second layers. The semiconductor device also includes an Ohmic contact and multiple conductive vias through the second layer. The conductive vias are configured to electrically couple the Ohmic contact to the electron gas layer. The conductive vias could have substantially vertical sidewalls or substantially sloped sidewalls, or the conductive vias could form a nano-textured surface on the Ohmic contact. The first layer could include Group III-nitride nucleation, buffer, and channel layers, and the second layer could include a Group III-nitride barrier layer.
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