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Methods for optical proximity correction in the design and fabrication of integrated circuits
Methods for optical proximity correction in the design and fabrication of integrated circuits
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机译:集成电路设计和制造中的光学邻近校正方法
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摘要
A method of manufacturing an optical lithography mask includes providing a patterned layout design comprising a plurality of polygons, correcting the patterned layout design using optical proximity correction (OPC) by adjusting widths and lengths of one or more of the plurality of polygons, to generate a corrected patterned layout design, converting the corrected patterned layout design into a mask writer-compatible format, to generate a mask writer-compatible layout design comprising the plurality of polygons, and biasing each polygon in the plurality of polygons with a bias that accounts for large-scale density values of the patterned layout design, to generate a biased, mask writer-compatible layout design.
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