'cusped permanent magnet electron cyclotron resonance-plasma enhanced-film deposition and etching system'

摘要

The present invention is a compact Electron Cyclotron Resonance-Plasma Enhanced-Film Deposition and Etching system. The system develops uniform dielectric films by chemical vapour deposition technique. It can also efficiently etch a work piece. A pair of oppositely oriented, inline solid cylindrical permanent magnet in conjunction with a specially configured annular iron disc and return yoke produces a cusped close iso-gauss ECR surface. The substrate is placed at a uniform magnetic field inside the plasma chamber. The radial injection of microwave power at high magnetic field region causes efficient absorption of microwave power creating high density plasma. The emission of sufficient cold secondary electrons from alumina surfaces maintains a stable ECR plasma discharge. A large cross- sectional area of stable high density plasma, in the vicinity of the work piece, facilitates faster uniform high quality dielectric film deposition and efficient sputtering of the work piece.