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REACTOR AND PLANT FOR THE CONTINUOUS PREPARATION OF HIGH-PURITY SILICON TETRACHLORIDE OR HIGH-PURITY GERMANIUM TETRACHLORIDE
REACTOR AND PLANT FOR THE CONTINUOUS PREPARATION OF HIGH-PURITY SILICON TETRACHLORIDE OR HIGH-PURITY GERMANIUM TETRACHLORIDE
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机译:连续制备高纯度四氯化硅或高纯度四氯化锗的反应器和装置
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摘要
The invention relates to a reactor, a plant and a continuous, industrial process carried out therein for preparing high-purity silicon tetrachloride or high-purity germanium tetrachloride to be purified, which is contaminated by at least one hydrogen-containing compound, by means of a cold plasma and isolating purified high-purity silicon tetrachloride or germanium tetrachloride form the resulting treated phase by fractional distillation, wherein the treatment is carried out in a plasma reactor (4) in which the longitudinal axes of the dielectric (4,4), of the high-voltage electrode (4.3) and of the earthed, metallic heat exchanger (4.2) are oriented parallel to one another and at the same time parallel to the force vector of gravity.
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